POROUS GAN FABRICATION: A BIBLIOMETRIC EXPLORATION OF ELECTROLESS, ELECTROCHEMICAL AND PHOTOELECTROCHEMICAL ETCHING

Abstract

The bibliometric analysis on the topic of porous gallium nitride (GaN) was sourced from the Web of Science (WoS) Core Collection database to provide insight regarding the progression of the topic. A performance analysis and science mapping were performed using Microsoft Excel, WoS analytical tool and VOSviewer to analyze the publication of porous GaN until the year 2023. The result revealed a fluctuating trend of published documents and citations impact of porous GaN research over the past 26 years. The highest publication output of porous GaN was in the year 2016 with 20 documents while the highest yearly publication impact was in 2012 with 309 citations. Although the publication performance is fluctuating, the recent publication of porous GaN in the year 2023 is at 11 documents with four citations and is expected to rise. China ranked as the most productive country contributing to 53 documents on the topic while the USA is the most impactful country in producing quality research with 1331 overall citations. The study also included the most influential and prolific in terms of organizations and authors relating to the porous GaN topic. Furthermore, keyword analysis illustrated through the science mapping suggests the future trend of porous GaN involves a multidisciplinary approach concerning the fabrication of GaN through optical engineering and material characterization. Limitations of the studies included the dataset received only from the Web of Science database and not from any other source, such as Scopus or Google Scholar. The value of the study lies in providing a bibliometric understanding of the evolution, popularity, and advancement of these etching methods.