A SYSTEMATIC REVIEW ON POROUS GALLIUM NITRIDE UTILIZED PHOTOELECTROCHEMICAL ETCHING TECHNIQUE

Abstract

Wide band gap semiconductor gallium nitride (GaN) has been extensively study in the past few decades due to its great potential for many applications, including optoelectronics, solar cells, and power electronics. Porous GaN is one of the most promising nanostructure improvements to enhance the optical properties as well as the sensing and detection capabilities of a device. One low-cost and harmless method to create nanostructured GaN is photoelectrochemical (PEC) etching. This paper presents a systematic literature review of the PEC etching technique's performance and process. There are 15 selected papers chosen from five electronic databases, including Web of Science, IEEE Xplore, Science Direct, ACS, and Emerald Insight. This paper refers to the Preferred Reporting Items for Systematic reviews and Meta-Analyses (PRISMA) guidelines. The results conclude the specification of the GaN material as well as the growth technique. The pre, during, and post process of PEC has also been discussed in this paper. As a way to find out the performance of PEC etching, the morphological, structural, and optical properties of porous GaN have been analyzed in this study. This paper can be used as a reference for PEC etching of GaN in the future.