EFFECT OF NIOBIUM DOPANT CONCENTRATION ON ZNO NANOSTRUCTURES ON SI POROUS SUBSTRATE

Abstract

Zinc oxide (ZnO) nanostructures have gained popularity in sensor technology due to their unique properties and facile device integration. However, the intrinsic optical and electrical properties of ZnO are suboptimal for direct industrial applications, necessitating enhancements through doping. This study investigates the impact of niobium (Nb) doping concentrations on the physical, optical, and electrical characteristics of ZnO nanostructures. FESEM analyses indicate successful deposition of ZnO on silicon nanoparticles substrates, with nanostructure sizes peaking at 88 nm and 115 nm for 6% and 8% Nb dopant concentrations, respectively. XRD results suggest that the structural integrity of the nanostructures is maintained up to a 10% doping level, with an optimal concentration at 6%. UV-Vis spectroscopy shows a shift in the absorption peak into the visible range and a decrease in maximum reflectivity from 47.5990% at 2% doping to 40.9205% at 6% doping, indicating enhanced light absorption suitable for optoelectronic applications. Electrical measurements reveal that a 6% Nb dopant concentration yields the lowest resistivity and highest conductivity among the tested samples. These findings underscore the potential of Nb-doped ZnO nanostructures in improving the performance of optoelectronic devices through tailored doping strategies.